Hier werden die Unterschiede zwischen zwei Versionen angezeigt.
| Nächste Überarbeitung | Vorhergehende Überarbeitung | ||
| de:parts:2n3906 [2014/03/10 02:38] – angelegt MWanke | de:parts:2n3906 [2024/09/22 00:26] (aktuell) – Externe Bearbeitung 127.0.0.1 | ||
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| Zeile 1: | Zeile 1: | ||
| ====== 2N3906 ====== | ====== 2N3906 ====== | ||
| - | {{: | + | <awbox gray>{{: |
| - | PNP General Purpose Amplifier | + | |
| - | This device is designed for general purpose amplifier and switching | + | |
| - | applications at collector currents of 10 μA to 100 mA. | + | |
| [{{ : | [{{ : | ||
| + | PNP General Purpose Amplifier\\ | ||
| + | This device is designed for general purpose amplifier and switching | ||
| + | applications at collector currents of 10 μA to 100 mA. | ||
| The 2N3906 is a common PNP bipolar junction transistor used for general purpose low-power amplifying or switching applications. Compared to the general run of silicon transistors, | The 2N3906 is a common PNP bipolar junction transistor used for general purpose low-power amplifying or switching applications. Compared to the general run of silicon transistors, | ||
| Zeile 13: | Zeile 13: | ||
| When looking at the flat side with the wires pointed downward, the three wires emerging from the transistor are (left to right) the emitter, base, and collector leads. | When looking at the flat side with the wires pointed downward, the three wires emerging from the transistor are (left to right) the emitter, base, and collector leads. | ||
| - | It is a 200-milliamp, | + | It is a 200-milliamp, |
| ===== Pinbelegung / Pinout ===== | ===== Pinbelegung / Pinout ===== | ||
| Zeile 37: | Zeile 37: | ||
| ====== Downloads / Links ====== | ====== Downloads / Links ====== | ||
| * Quelle | * Quelle | ||
| + | * http:// | ||
| * Datenblatt | * Datenblatt | ||
| * {{: | * {{: | ||